Performance Valuation of Electrical Characteristics for MOSFET Device Using TCAD software

Abstract

MOSFET transistor is one of the most important and efficient components in modern electronic circuits due to its high efficiency and low power consumption. The performance of N-MOS and P-MOS transistor has been studied and analyzed by evaluating key electrical characteristics such as threshold voltage, drain current, (gate and drain) voltages, LDD (Lightly Doped Drain functions), PLDD (P-type Lightly Doped Drain) and DIBL (Drain-Induced Barrier Lowering). Simulation using Silvaco TCAD Program tools was employed to extract the device structure and current-voltage characteristics for both transistors. For N-MOS, it was observed that drain current (Id) grew linearly with expanding gate voltage (Vg) for different values of drain voltages (Vd), while for P-MOS the values were opposite. The Threshold Voltage for N-MOS transistor (Vt= 0.5V) while for P-MOS (Vt= -0.5V), The maximum current obtained is Id= 0.515 mA at Vd= 3.35 V for N-MOS and the highest current obtained is Id= -0.335 mA at Vd= -3.35 V for P-MOS, so N-MOS was faster than P-MOS, while P-MOS is considered complementary to N-MOS. The two transistors were combined for more low power dissipation and high performance.